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Original Papers　
  1. R. Negishi, K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa and Y. Kobayashi
    "Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking"
    Applied Physics Letters     (2017) in press.


  2. M. Fukumori, P. R. Raj, T. Fujiwara, A. Termeh Yousefi, R. Negishi, Y. Kobayashi, Hi Tanaka and T. Ogawa
    "Chirality dependence of Longtitudinal Unzipping of Single-walled Carbon Nanotube to obtain Graphene Nanoribbon" Japanese Journal of Applied Physics (2017) in press.


  3. R. Negishi, Y. Matsui and Y. Kobayashi
    "Improving sensor response using reduced graphene oxide film transistor biosensor by controlling the pyrene adsorption as an anchor molecules" Japanese Journal of Applied Physics (2017) in press.


  4. R. Negishi, M. Akabori, T. Ito, Y. Watanabe and Y. Kobayashi
    "Band-like transport in highly crystalline graphene films from defective graphene oxides" Scientific Reports. Vol. 6 28936 1-10 (2016).

  5. H. Tanaka, R. Arima, M. Fukumori, D. Tanaka, R. Negishi, Y. Kobayashi, S. Kasai, T. Yamada, T. Ogawa
    "Method for Controlling Electrical Properties of Single-Layer Graphene Nanoribbons via Adsorbed Planar Molecular Nanoparticles" Scientific Reports (2015).


  6. R. Negishi and Y. Kobayashi
    "Extraordinary suppression of carrier scattering in large area graphene oxide films" Applied Physics Letters. Vol. 105 253502 (2014).


  7. A. Tosaka, I. Mochizuki, R. Negishi and Y. Shigeta
    "Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)" Journal of Applied Physics Vol. 113 073511-1-4 (2013).


  8. H. Tanaka, L. Hong, M. Fukumori, R. Negishi, Y. Kobayashi, D. Tanaka, T. Ogawa
    "Influence of nanoparticle size on the electrical properties of naphthalenediimide with sigle-walled carbon nanotube wiring" Nanotechnology Vol.23 215701 (2012).


  9. R. Negishi, H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Carrier transport properties of the field effect transistors with graphene channel prepared by chemical vapor deposition" Japanese Journal of Applied Physics Vol. 51 06FD03 (2012).


  10. R. Negishi, H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor deposition" Thin Solid Films Vol. 519 6447-6452 (2011).


  11. R. Negishi, H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Thickness control of graphene overlayer via layer-by-layer growth on graphene templates by chemical vapor deposition" Japanese Journal of Applied Physics Vol. 50 06GE04-1-4 (2011).


  12. T. Nishino, R. Negishi, H. Tanaka, T. Ogawa and K. Ishibashi
    "Fabrication of nanogap electrodes by the molecular lithography technique" Japanese Journal of Applied Physics Vol. 50, 035204-1-6 (2011).


  13. T. Nishino, R. Negishi, K. Ishibashi, H. Ozawa, M. Kawao and T. Nagata
    "Fabrication and single electron transport of Au nano-particles　placed between Nb nanogap electrodes" Nanotechnology Vol. 21, 225301-1-6 (2010).


  14. Y. Shigeta, I. Mochizuki, and R. Negishi
    "Strain induced modification of surface metallic states on √3×√3 Ag structure" FBE RAS, IACP (2009) 183.


  15. I. Mochizuki, R. Negishi, and Y. Shigeta
    "Strain Induced Modification of Quasi-two Dimensional Electron Gas State on √3×√3 Ag Structure" Journal of applied physics Vol. 107, 084317-1-3 (2010).


  16. Y. Shigeta, R. Negishi and M. Suzuki
    "Local electronic states on two-dimensional nanoscale island of Si and Ge fabrication on Si (111) 7x7 substrate" International Journal of Nanoscience Vol. 8, No. 6, 595 (2009).


  17. I. Mochizuki, R. Negishi and Y. Shigeta
    "Modification of electric states of √3×√3 Ag structure by strained Ge/Si(111) substrate" Journal of applied physics Vol. 106, 013709-1-4 (2009).


  18. R. Negishi, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, H. Ozawa and T. Ogawa
    "I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions" Applied Physics Letters Vol. 90, 223112-1-3 (2007).


  19. R. Negishi, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, Hi. Ozawa and T. Ogawa
    "Size-dependent single electron tunneling effect in Au nanoparticles" Surface Science Vol. 601, 3907-3911 (2007).


  20. I. Mochizuki, R. Negishi, and Y. Shigeta, "Growth of metallic Au silicide islands on the Si(111) -(7×7) substrate" Journal of physics Conference Series Vol. 61, 1056 -1060 (2007).


  21. R. Negishi, T. Hasegawa, K. Terabe, M. Aono T. Ebihara, H. Tanaka and T. Ogawa
    "Fabrication of nanoscale gaps using a combination of self-assembled molecular and electron beam lithographic techniques" Applied Physics Letters Vol. 88, 223111-1-3 (2006): Also selected in Virtual Journal of Nanoscale Science & Technology, June 19 Vol. 13, Issue 24 (2006).


  22. R. Negishi, I. Mochizuki and Y. Shigeta
    "Fabrication of uniform Au silicide islands on the Si(111)-(7×7) substrate" Surface Science Vol. 600, 1125-1128 (2006).


  23. M. Suzuki, R. Negishi, and Y. Shigeta
    "Strain and electronic structure of Ge nanoislands on Si(111)-7×7 surface" Physical Review B 72, 235325-1-5 (2005).


  24. C. Liang, K. Terabe, T. Hasegawa, Ryota Negishi, T. Tamura and M. Aono
    "Template-Confined Growth and Nonlinear Electrical Transport" Small Vol. 1, 971-975 (2005).


  25. R. Negishi, M. Suzuki and Y. Shigeta
    "Electronic structure of dangling-bond states on the Si nanoisland and the Si(111) 7×7 substrate" Journal of Applied Physics Vol. 98, 063712-1-5 (2005) Also selected in Virtual Journal of Nanoscale Science & Technology, October 10, Vol. 12, Issue 15 (2005).


  26. R. Negishi, M. Suzuki and Y. Shigeta
    "Study of photoelectron spectroscopy from extremely uniform Si nano-islands on Si(111) 7×7 substrate" Journal of Applied Physics Vol. 96, 5013-5016 (2004).


  27. R. Negishi and Y. Shigeta
    "Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7×7) surface" Jornal of Applied Physics Vol. 93, 4824-4830 (2003).


  28. R. Negishi and Y. Shigeta
    "Local structure and electronic state of a nanoscale Si island on Si(111)-7×7 substrate", Surface Science Vol. 507-510, 582-587 (2002).


  29. R. Negishi and Y. Shigeta
    "Nucleation of polycrystalline layer induced by formation of 30 ° partial dislocation during Si/Si(111) growth" Surface Science Vol. 505 ,225-233 (2002).


  30. R. Negisih and Y. Shigeta
    "Surface roughening induced by a characteristic surface structure of a Si film grown on Si(111)" Surface Science Vol. 481, 67-77 (2001).

Invited Papers・Books
  1. T. Nishino, R. Negishi, K. Ishibashi, “自己組織化分子リソグラフィーによるナノギャップ電極作製法の開発と応用” Journal Vacuum Society Japan, (2012)　Vol.55, No. 7, pp.333-340 (2012)


  2. 根岸 良太、田中 啓文“ハイブリッド型微細加工技術を用いた金ナノ粒子の単電子トンネルの観察”Journal Vacuum Society Japan, Vol. 51, No. 7, pp. 428-432 (2008)


  3. 重田 諭吉、根岸 良太、鈴木 雅彦、“シリコン及びゲルマニュームナノアイランドの微細構造と局所電子状態”Journal Vacuum Society Japan, Vol. 51, No. 5, pp. 291-297 (2008).


  4. Y. Shigeta, R. Negishi and M. Suzuki, Surface Science Research, edited by Charles P. Norris (Nova Science Publishers, 2005), Chap. 4, pp.75-91.



Patents
  1. 根岸 良太、小林 慶裕、松崎 通弘、“グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子およびセンサ”、特願2014-172628（2014年8月27日）


  2. 小林 慶裕、根岸 良太、加瀬 寛人、有福 達治、清柳 典子、森野 富夫 ”電界効果トランジスタおよびそれを用いたセンサ”, 特願2014-162737 （2014年8月8日）


  3. 根岸 良太、小林 慶裕、高坂 成時、大野 恭秀、前橋 兼三、松本 和彦、“グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子、センサー、アレイ素子およびセンシング方法”、特願2013-105560（2013年5月17日）


  4. KOBAYASHI Yoshihiro, NEGISHI Ryota, KORIYAMA Koriyama, AGATA Shogo, FUJIMOTO Kazuki, ARIFUKU Michiharu, SHIMMOTO Masahiro, IMAIZUMI Masahiro, KIYOYANAGI Noriko, “High Purity Carbon Nanotube, Process For Preparing The Same And Transparent Conductive Using The Same”, 特願　米国特許　13/764,981(2013年2月12日)


  5. 小林 慶裕、根岸 良太、郡山 翔二、阿形 省吾、藤本 一輝、有福 達治、新本 昭樹、今泉 雅裕、清柳 典子、”高純度カーボンナノチューブ、その製造方法及びそれを用いた透明導電膜”, 特願2012-27970 （2012年2月12日）


Prizes
  1. 22nd International Microprocesses and Nanotechnology Conference 2009, "Most Impressive Poster" T. Nishino, R. Negishi, H. Ozawa and K. Ishibashi.


  2. Intelligent Materials and System Forum "TAKAGI AWARD" 2005, K. Terabe, T. Hasegawa, T. Tamura, M. Kundu, R. Negishi, Changhao Liang, T. Sakamoto and M. Aono.
最終更新日 ２０１６年４月１２日